In microelectronics, the photoresist process has become established for the production of conductor tracks. Here, a photopolymer in the resist of the photoresist film is exposed to UV radiation in the range of 340 to 420 nm, which triggers a radical polymerisation (negative resist). The unexposed areas are then loosened and removed. In this process, the UV-cured resist serves as a mask for the conductor track.
Atmospheric oxygen can hinder radical polymerisation by peroxide radicals, making the photoresist unstable. HOSTAPHAN™ prevents this by acting as a barrier and allowing UV rays to pass unhindered through the boPET film.
