HOSTAPHAN® polyester films for photoresist processes
The manufacture of microelectronics depends on the photoresist process to lay down conductor paths. For example, a photopolymer in the lacquer of a photoresist film is irradiated in the UV range from 340 to 420 nm, which triggers a radical polymerisation (negative resist). The non-irradiated portions are then dissolved and removed. The UV cured lacquer serves to mask the conductor paths in this example.
Oxygen from the air can hinder the radical polymerisation by forming peroxides. As a result, the photoresist does not cross-link completely and remains unstable. HOSTAPHAN® prevents this source of trouble by providing a barrier to oxygen from the air. The UV irradiation used for curing passes through the boPET film unimpeded.