HOSTAPHAN® polyester films for photoresist processes

The manufacture of microelectronics depends on the photoresist process to lay down conductor paths. For example, a photopolymer in the lacquer of a photoresist film is irradiated in the UV range from 340 to 420 nm, which triggers a radical polymerisation (negative resist). The non-irradiated portions are then dissolved and removed. The UV cured lacquer serves to mask the conductor paths in this example.

banner_einsatz_sonstiges_photoresist-1Oxygen from the air can hinder the radical polymerisation by forming peroxides. As a result, the photoresist does not cross-link completely and remains unstable. HOSTAPHAN® prevents this source of trouble by providing a barrier to oxygen from the air. The UV irradiation used for curing passes through the boPET film unimpeded.

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